| PART |
Description |
Maker |
| K4H560838E-TC/LB0 K4H560838E-TC/LA2 K4H560838E-TC/ |
DDR SDRAM 256Mb E-die (x4, x8) 256Mb的DDR SDRAM的电子芯片（了x4，x8
Quad Wide Bandwidth High Output Drive Single Supply Op Amp 16-PDIP -40 to 125
256Mb E-die DDR SDRAM Specification 66 TSOP-II
Dual Micropower Precision Low-Voltage Operational Amplifier 8-SOIC -55 to 125
10-Bit, 32 kSPS ADC Serial Out, uProcessor Periph./Standalone, 11 Ch. 20-PLCC
10-Bit, 32 kSPS ADC Serial Out, uProcessor Periph./Standalone, 11 Ch. 20-PDIP
DDR SDRAM 256Mb E-die (x4, x8)
|
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| K4S560832E-NCL75 K4S561632E-NCL60 K4S561632E-NCL75 |
16M x 16 SDRAM, LVTTL, 133MHz
256Mb E-die SDRAM Specification 54pin sTSOP-II
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
|
| K4H561638H-UI_PCC K4H561638H-UI_PB3 K4H561638H-UI_ |
256Mb H-die DDR SDRAM Specification
|
SAMSUNG[Samsung semiconductor]
|
| K4H560838F K4H561638F-UCCC K4H561638F-UCC4 K4H5608 |
256Mb F-die DDR400 SDRAM Specification 256Mb的的F -模具支持DDR400内存规格
|
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Samsung Electronic
|
| K4H560438E-NC/LA2 K4H560838E-NC/LA2 K4H560438E-NC/ |
256Mb E-die DDR SDRAM Specification 54pin sTSOP(II) 256Mb的电子芯片DDR SDRAM内存规格54pin sTSOP（二
DIODE ZENER SINGLE 300mW 43Vz 5mA-Izt 0.02 0.05uA-Ir 33 SOT-23 3K/REEL 256Mb的电子芯片DDR SDRAM内存规格54pin sTSOP（二
Quad Wide Bandwidth High Output Drive Single Supply Op Amp 20-HTSSOP 0 to 70
Quad Wide Bandwidth High Output Drive Single Supply Op Amp 16-SOIC -40 to 125
10-Bit, 32 kSPS ADC Serial Out, uProcessor Periph./Standalone, 11 Ch. 20-SOIC
256Mb E-die DDR SDRAM Specification 54pin sTSOP(II)
|
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| HYS72V32300GU-8-C2 HYS64V32300GU HYS64V32300GU-75- |
3.3 V 32M x 64/72-Bit, 256MByte SDRAM Modules 168-pin Unbuffered DIMM Modules
SDRAM|32MX64|CMOS|DIMM|168PIN|PLASTIC 内存| 32MX64 |的CMOS |内存| 168线|塑料
SDRAM|32MX72|CMOS|DIMM|168PIN|PLASTIC
SDRAM Modules - 256MB PC133 (3-3-3) 1-bank; End-of-Life
SDRAM Modules - 256MB PC133 (3-3-3) 1-bank (ECC); End-of-Life
SDRAM Modules - 256MB PC133 (2-2-2) 1-bank; End-of-Life
SDRAM Modules - 256MB PC133 (2-2-2) 1-bank (ECC); End-of-Life
|
INFINEON[Infineon Technologies AG]
Infineon Technologies A...
|
| MR18R162GAF0 MR16R162GAF0 MR18R1624AF0 MR18R1622AF |
64M X 16 RAMBUS MODULE, DMA184
TVS 500W 6.5V BIDIRECT DO-15 6Mx16显示）2/8/16）件RIMM的模块，基于256Mb阿芯片，32秒银行，16K/32ms参考，.5V
16Mx16显示）2/8/16）件RIMM的模块，基于256Mb阿芯片，32秒银行，16K/32ms参考，.5V
(MR18R1622(4/8/G)AF0) (16Mx16)x2(4/8/16)pcs RIMM Module based on 256Mb A-die
(MR1xR1622(4/8/G)AF0) (16Mx16)x2(4/8/16)pcs RIMM Module based on 256Mb A-die
(16Mx16)x2(4/8/16)pcs RIMM Module based on 256Mb A-die, 32s banks,16K/32ms Ref, 2.5V
|
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
|
| K5D5657ACM-F015 |
MCP / 256Mb NAND and 256Mb Mobile SDRAM
|
Samsung Electronics
|
| HYM72V32736BLT8-K HYM72V32736BT8-K HYM72V32736BT8- |
SDRAM|32MX72|CMOS|DIMM|168PIN|PLASTIC
SDRAM - Unbuffered DIMM 256MB
x64 SDRAM Module
|
Hynix Semiconductor
|
| HY57V561620BT-H HY57V561620BL/ST-H HY57V561620BL/S |
SDRAM - 256Mb
IC,SDRAM,4X4MX16,CMOS,TSOP,54PIN,PLASTIC
|
Hynix Semiconductor
|
| HYS64D16000GDL-8-B HYS64D16000GDL-6-B HYS64D16000G |
DDR SDRAM Modules - 256MB (32Mx64) PC3200 2-bank
DDR SDRAM Modules - 128MB (16Mx64) PC2700 1-bank
DDR SDRAM Modules - 128MB (16Mx64) PC2100 1-bank
DDR SDRAM Modules - 256MB (32Mx64) PC2100 2-bank
200-Pin Small Outline Dual-In-Line Memory Modules
|
INFINEON[Infineon Technologies AG]
|
